 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr IXFR 55N50F VDSS = 500 V ID25 = 55 A RDS(on) = 90 m trr 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS TJ 150C, RG = 2 TC = 25C Maximum Ratings 500 500 20 30 45 220 55 60 3.0 10 400 -40 ... +150 150 -40 ... +150 V V V V A A A mJ J V/ns W C C C C V~ g ISOPLUS 247TM E153432 Isolated backside* G = Gate D = Drain S = Source TAB = Electrically Isolated Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation RF capable Mosfets Low gate charge and capacitances - easier to drive -faster switching Low drain to tab capacitance(<30pF) Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier Applications DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Advantages Easy assembly Space savings High power density 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min 300 2500 5 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 500 3.0 V 5.5 V 200 nA TJ = 25C TJ = 125C 100 A 3 mA 90 m VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1mA VDS = VGS, ID = 8mA VGS = 20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = IT Notes 2, 3 (c) 2004 IXYS All rights reserved DS98814C(06/04) IXFR 55N50F Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Notes 2, 3 22 33 6700 VGS = 0 V, VDS = 25 V, f = 1 MHz 1250 330 24 VGS = 10 V, VDS = 0.5 * VDSS, ID =IT RG = 1 (External) 20 45 9.6 195 VGS = 10 V, VDS = 0.5 * VDSS, ID = IT 50 95 0.30 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W Dim. A A1 A2 b b1 b2 C D E e L L1 Q R 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 ISOPLUS 247 OUTLINE gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK V DS = 10 V; ID = IT Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Test Conditions V GS = 0 V Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Note 1 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 55 220 1.5 250 A A V ns C A IF = 25A,-di/dt = 100 A/s, VR = 100 V 1.0 10 Note: 1. Pulse width limited by TJM 2. Pulse test, t 300 s, duty cycle d 2 % 3. IT = 27.5A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 |
Price & Availability of IXFR55N50F
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |